12
RF Device Data
Freescale Semiconductor
MRF8S9200NR3
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
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AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
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AN1955: Thermal Measurement Methodology of RF Power Amplifiers
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AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
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EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
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Electromigration MTTF Calculator
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RF High Power Model
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.s2p File
Development Tools
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Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2009
?
Initial Release of Data Sheet
1
May 2010
?
Revised VSWR statement to correct output power from 200 Watts CW to 300 Watts CW, p. 1
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Replaced Case Outline 2021--01, Issue O, with 2021--03, Issue B, p. 1, 9--11. Changed ?Drain Lead? to
?Pin 1? and ?Gate Lead? to ?Pin 2? on Sheet 1. Corrected ?A2? to ?A1? in Note 7, and changed dimension
A1 from 0.061″--0.063″
(1.55--1.60 mm) to 0.059″--0.065″
(1.50--1.65 mm) on Sheet 3. Added 4 exposed
source tabs at dimension e1 on Sheets 1 and 2. Added dimension e1 0.721″--0.729″
(18.31--18.52 mm) in
the table, revised D1 minimum dimension from 0.730″
(18.54 mm) to 0.720″
(18.29 mm), revised dimension
E2 from 0.312″
(7.92 mm) to 0.306″
(7.77 mm), and revised wording of Note 8 on Sheet 3.
?
Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2
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相关代理商/技术参数
MRF8S9200NR3_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF8S9202GNR3 功能描述:射频MOSFET电源晶体管 HV8 900MHz 58W OM780-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9202N 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET
MRF8S9202N_12 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF8S9202NR3 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 58W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9220HR3 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 66W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9220HR5 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 66W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9220HSR3 功能描述:射频MOSFET电源晶体管 HV8 WCDMA 66W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray